A selection of research highlights is shown below. See Google Scholar for the full publication list.
Nick Pant on Google Scholar ↗
Calculations of AlGaN quantum wells show how carrier confinement and alloy disorder increase non-radiative recombination, helping explain efficiency losses in ultraviolet LEDs.
Applied Physics Letters 125, 021109 (2024)
A theoretical treatment of disordered InGaN examines how carrier localization changes competing recombination processes, challenging the idea that localization alone explains high LED efficiency.
Physical Review Applied 20, 064049 (2023)
Multiscale calculations connect the changing emission spectrum of nitride LEDs to carrier density and many-body effects, allowing direct comparison with measured spectra.
AIP Advances 12, 125020 (2022)
Calculations identify atomically thin AlN/GaN superlattices as promising materials for power electronics, combining wide band gaps with high electron mobility.
Applied Physics Letters 121, 032105 (2022)